tic24 6 se ries silicon triacs 1 december 1971 - revised september 2002 spe cification s ar e subjec t t o ch ang e withou t notice. hi gh cu rr en t triacs 16 a rms glas s p ass iv ate d wa fer 400 v t o 800 v off-s tate voltage 125 a pe ak cu rr ent max i gt of 50 ma (q uadran ts 1 - 3) abs olu te maximu m rati ng s over op erati ng case temperat ure (unless otherwise no ted) notes: 1. these values apply bidirectiona ll y for any value o f resistance bet ween the ga te an d main terminal 1. 2. thi s value ap plie s for 50-hz full-sine-wave operation with resistive load . abo ve 70 c derate linearly to 110 c case t emperature at the rate o f 400 ma / c. 3. this valu e a ppli es for one 50-h z fu ll -si ne -wave when t h e d evi ce i s op erating at (or below) the ra ted valu e of pe ak reverse vo lta ge and on- state curren t. surge ma y be repeated after t h e device has returned to or igi na l ther mal eq uil ibrium. rating symbol value un it repetiti ve pea k o ff -stat e vo ltage (see not e 1) TIC246d TIC246m ti c246s TIC246n v drm 400 600 700 800 v full-cycl e rms on-stat e curren t a t (or below) 70 c cas e temperature (see not e 2) i t(rms) 16 a peak on-stat e surg e current fu ll -sine-w ave a t (or be lo w) 25 c cas e temperatur e (se e not e 3) i tsm 125 a peak gate current i gm 1 a operatin g cas e tem pe ratur e range t c -40 t o +110 c storage temperatur e range t stg -40 t o +125 c lea d te mp erature 1.6 m m fr om case for 10 secon ds t l 230 c electrica l characteristics at 25c case tem peratu re (unless ot herwis e noted ) p ara meter tes t cond iti ons min ty p max un it i drm r ep etitiv e pe ak o ff -state current v d = rated v drm i g = 0 t c = 110c 2 ma i gt gat e trigger current v su pp ly = +1 2 v? v su pp ly = +1 2 v? v su pp ly = -1 2 v? v su pp ly = -1 2 v? r l = 10 r l = 10 r l = 10 r l = 10 t p(g) > 20 s t p(g) > 20 s t p(g) > 20 s t p(g) > 20 s 12 - 19 -16 34 50 -50 -50 ma v gt gat e trigger voltage v su pp ly = +1 2 v? v su pp ly = +1 2 v? v su pp ly = -1 2 v? v su pp ly = -1 2 v? r l = 10 r l = 10 r l = 10 r l = 10 t p(g) > 20 s t p(g) > 20 s t p(g) > 20 s t p(g) > 20 s 0.8 -0.8 -0.8 0.9 2 -2 -2 2 v v t on-stat e volt ag e i tm = 22.5 a i g = 50ma (se e not e 4) 1.4 1.7 v ? al l voltag es ar e with re sp ec t to ma in termina l 1. note 4: this parameter mus t be measured using pulse techniqu es, t p = 1 ms, duty cy cle 2 %. voltage-sensing contacts separate from the curren t ca rr yin g contact s are locate d withi n 3.2 mm fro m the de vic e bo dy. mt1 mt2 g to-2 20 packa ge (t op vi ew) pi n 2 is in electrical contac t wi th t he m ou nti ng bas e. m dc 2aca 1 2 3 this series is currently available, but not recommended for new designs.
TIC246 series silicon triacs 2
december 1971 - revised september 2002 specifications are subject to change without notice. ? all voltages are with respect to main terminal 1. note 5: the triacs are triggered by a 15-v (open-circuit amplitude) pulse supplied by a generator with the following characteristics: r g = 100 ? , t p(g) = 20 s, t r = 15 ns, f = 1 khz. i h holding current v supply = +12 v? v supply = -12 v? i g = 0 i g = 0 init? i tm = 100 ma init? i tm = -100 ma 22 -12 40 -40 ma i l latching current v supply = +12 v? v supply = -12 v? (see note 5) 80 -80 ma dv/dt critical rate of rise of off-state voltage v d = rated v d i g = 0 t c = 110c 400 v/s dv/dt (c) critical rise of commutation voltage v d = rated v d di/dt = 0.5 i t(rms) /ms t c = 80c i t = 1.4 i t(rms) 1.2 9 v/s di/dt critical rate of rise of on -state current v d = rated v d di g /dt = 50 ma/ s i gt = 50 ma t c = 110c 100 a/s thermal characteristics parameter min typ max unit r jc junction to case thermal resistance 1.9 c/w r ja junction to free air thermal resist ance 62.5 c/w electrical characteristics at 25c case temperature (unless otherwise noted) (continued) parameter test conditions min typ max unit typical characteristics figure 1. figure 2. gate trigger current t c - case temperature - c -60 -40 -20 0 20 40 60 80 100 120 i gt - gate trigger current - ma 01 1 10 100 1000 tc08aa case temperature vs v supply i gtm + + + - - - - + v aa = 12 v r l = 10 ? t p(g) = 20 s gate trigger voltage t c - case temperature - c -60 -40 -20 0 20 40 60 80 100 120 v gt - gate trigger voltage - v 01 1 10 tc08ab case temperature vs v aa = 12 v r l = 10 ? t p(g) = 20 s v supply i gtm + + + - - - - + }
TIC246 series silicon triacs 3
december 1971 - revised september 2002 specifications are subject to change without notice. typical characteristics figure 3. figure 4. holding current t c - case temperature - c -60 -40 -20 0 20 40 60 80 100 120 i h - holding current - ma 01 1 10 100 tc08ad case temperature vs v aa = 12 v i g = 0 initiating i tm = 100 ma v supply + - latching current t c - case temperature - c -60 -40 -20 0 20 40 60 80 100 120 i l - latching current - ma 1 10 100 1000 tc08ae case temperature vs v aa = 12 v v supply i gtm + + + - - - - +
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